BD810G
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- Mfr.Part #
- BD810G
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS PNP 80V 10A TO220
- Stock
- 15,758
- In Stock ：
- 15,758
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector (Ic) (Max) :
- 10 A
- Power - Max :
- 90 W
- Frequency - Transition :
- 1.5MHz
- Voltage - Collector Emitter Breakdown (Max) :
- 80 V
- Current - Collector Cutoff (Max) :
- 1mA (ICBO)
- Product Status :
- Obsolete
- Vce Saturation (Max) @ Ib, Ic :
- 1.1V @ 300mA, 3A
- Transistor Type :
- PNP
- Mounting Type :
- Through Hole
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Package / Case :
- TO-220-3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 15 @ 4A, 2V
- Supplier Device Package :
- TO-220
- Datasheets
- BD810G
PNP -55°C~150°C TJ 1mA ICBO 1 Elements 3 Terminations SILICON PNP TO-220-3 Tube Through Hole
BD810G Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 15 @ 4A 2V.The collector emitter saturation voltage is 1.1V, which allows for maximum design flexibility.When VCE saturation is 1.1V @ 300mA, 3A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 10A.In the part, the transition frequency is 1.5MHz.A maximum collector current of 10A volts can be achieved.
BD810G Features
the DC current gain for this device is 15 @ 4A 2V
a collector emitter saturation voltage of 1.1V
the vce saturation(Max) is 1.1V @ 300mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is 10A
a transition frequency of 1.5MHz
BD810G Applications
There are a lot of ON Semiconductor
BD810G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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