BCX51-16,115
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- Mfr.Part #
- BCX51-16,115
- Manufacturer
- Nexperia
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS PNP 45V 1A SOT89
- Stock
- 36,033
- In Stock ：
- 36,033
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector (Ic) (Max) :
- 1 A
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Voltage - Collector Emitter Breakdown (Max) :
- 45 V
- Package / Case :
- TO-243AA
- Current - Collector Cutoff (Max) :
- 100nA (ICBO)
- Product Status :
- Active
- Mounting Type :
- Surface Mount
- Frequency - Transition :
- 145MHz
- Transistor Type :
- PNP
- Supplier Device Package :
- SOT-89
- Operating Temperature :
- 150°C (TJ)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA, 2V
- Power - Max :
- 1.3 W
- Datasheets
- BCX51-16,115
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-243AA Tape & Reel (TR) Surface Mount
BCX51-16,115 Overview
In this device, the DC current gain is 100 @ 150mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 500mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 50mA, 500mA.Keeping the emitter base voltage at 5V allows for a high level of efficiency.50MHz is present in the transition frequency.An input voltage of 45V volts is the breakdown voltage.Maximum collector currents can be below 1A volts.
BCX51-16,115 Features
the DC current gain for this device is 100 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 50MHz
BCX51-16,115 Applications
There are a lot of Nexperia USA Inc.
BCX51-16,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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