BC847B,215
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- Mfr.Part #
- BC847B,215
- Manufacturer
- Nexperia
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.1A TO236AB
- Stock
- 1,516
- In Stock ：
- 1,516
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector (Ic) (Max) :
- 100 mA
- Product Status :
- Active
- Transistor Type :
- NPN
- Operating Temperature :
- 150°C (TJ)
- Current - Collector Cutoff (Max) :
- 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA, 5V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Supplier Device Package :
- TO-236AB
- Frequency - Transition :
- 100MHz
- Power - Max :
- 250 mW
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 5mA, 100mA
- Voltage - Collector Emitter Breakdown (Max) :
- 45 V
- Mounting Type :
- Surface Mount
- Datasheets
- BC847B,215
NPN 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC847B,215 Overview
This device has a DC current gain of 200 @ 2mA 5V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 200mV allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 6V to achieve high efficiency.In this part, there is a transition frequency of 100MHz.The maximum collector current is 100mA volts.
BC847B,215 Features
the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 400mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 100MHz
BC847B,215 Applications
There are a lot of Nexperia USA Inc.
BC847B,215 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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