BC635RL1G

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Mfr.Part #
BC635RL1G
Manufacturer
onsemi
Package / Case
TO-226-3, TO-92-3 Long Body (Formed Leads)
Datasheet
Download
Description
TRANS NPN 45V 1A TO92
Stock
23,393
In Stock :
23,393

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Vce Saturation (Max) @ Ib, Ic :
500mV @ 50mA, 500mA
Supplier Device Package :
TO-92 (TO-226)
Package / Case :
TO-226-3, TO-92-3 Long Body (Formed Leads)
Current - Collector (Ic) (Max) :
1 A
Voltage - Collector Emitter Breakdown (Max) :
45 V
Frequency - Transition :
200MHz
Power - Max :
625 mW
Mounting Type :
Through Hole
Current - Collector Cutoff (Max) :
100nA (ICBO)
Transistor Type :
NPN
Product Status :
Obsolete
DC Current Gain (hFE) (Min) @ Ic, Vce :
40 @ 150mA, 2V
Operating Temperature :
-55°C ~ 150°C (TJ)
Datasheets
BC635RL1G
VESS Electronics offers Transistors - Bipolar (BJT) - Single onsemi BC635RL1G, where excellence in quality meets cost-effectiveness. This premier offering shines with its comprehensive list of features, including Package / Case:TO-226-3, TO-92-3 Long Body (Formed Leads), Mounting Type:Through Hole, Operating Temperature:-55°C ~ 150°C (TJ), BC635RL1G pinout, BC635RL1G datasheet PDF, BC635RL1G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi BC635RL1G ,we also present a selection of BC817-40,235, BC817-40,215, BC807-40,215, Our extensive stock is ready to fulfill your requirements. Connect with us now for tailored solutions.

NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Reel (TR) Through Hole

BC635RL1G Overview


In this device, the DC current gain is 40 @ 150mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 500mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 50mA, 500mA.Maintaining the continuous collector voltage at 1A is essential for high efficiency.Keeping the emitter base voltage at 5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (1A).200MHz is present in the transition frequency.Maximum collector currents can be below 1A volts.

BC635RL1G Features


the DC current gain for this device is 40 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 200MHz


BC635RL1G Applications


There are a lot of ON Semiconductor
BC635RL1G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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