2STC4467
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- Mfr.Part #
- 2STC4467
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-3P-3, SC-65-3
- Datasheet
- Download
- Description
- TRANS NPN 120V 8A TO3P
- Stock
- 686
- In Stock ：
- 686
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mounting Type :
- Through Hole
- Current - Collector Cutoff (Max) :
- 10µA (ICBO)
- Current - Collector (Ic) (Max) :
- 8 A
- Supplier Device Package :
- TO-3P
- Frequency - Transition :
- 20MHz
- Voltage - Collector Emitter Breakdown (Max) :
- 120 V
- Transistor Type :
- NPN
- Operating Temperature :
- 150°C (TJ)
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 300mA, 3A
- Product Status :
- Obsolete
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 70 @ 3A, 4V
- Power - Max :
- 80 W
- Package / Case :
- TO-3P-3, SC-65-3
- Datasheets
- 2STC4467
NPN 150°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON NPN TO-3P-3, SC-65-3 Tube Through Hole
2STC4467 Overview
In this device, the DC current gain is 70 @ 3A 4V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.5V @ 300mA, 3A.Keeping the emitter base voltage at 6V allows for a high level of efficiency.20MHz is present in the transition frequency.An input voltage of 120V volts is the breakdown voltage.Maximum collector currents can be below 8A volts.
2STC4467 Features
the DC current gain for this device is 70 @ 3A 4V
the vce saturation(Max) is 1.5V @ 300mA, 3A
the emitter base voltage is kept at 6V
a transition frequency of 20MHz
2STC4467 Applications
There are a lot of STMicroelectronics
2STC4467 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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