2SCR564F3TR
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- Mfr.Part #
- 2SCR564F3TR
- Manufacturer
- ROHM Semiconductor
- Package / Case
- 3-UDFN Exposed Pad
- Datasheet
- Download
- Description
- TRANS NPN 80V 4A HUML2020L3
- Stock
- 3,000
- In Stock ：
- 3,000
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Power - Max :
- 1 W
- Package / Case :
- 3-UDFN Exposed Pad
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 500mA, 3V
- Current - Collector (Ic) (Max) :
- 4 A
- Voltage - Collector Emitter Breakdown (Max) :
- 80 V
- Operating Temperature :
- 150°C (TJ)
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 100mA, 2A
- Supplier Device Package :
- HUML2020L3
- Mounting Type :
- Surface Mount
- Frequency - Transition :
- 280MHz
- Transistor Type :
- NPN
- Current - Collector Cutoff (Max) :
- 1µA (ICBO)
- Product Status :
- Active
- Datasheets
- 2SCR564F3TR
NPN 150°C (TJ) 1μA (ICBO) 3-UDFN Exposed Pad Cut Tape Surface Mount
2SCR564F3TR Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 120 @ 500mA, 3V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.For high efficiency, the continuous collector voltage must be kept at 4A.There is a transition frequency of 280MHz in the part.There is no device package available from the supplier for this product.Single BJT transistor shows a 80 V maximal voltage - Collector EmSingle BJT transistorter Breakdown.
2SCR564F3TR Features
the DC current gain for this device is 120 @ 500mA, 3V
the vce saturation(Max) is 300mV @ 100mA, 2A
a transition frequency of 280MHz
the supplier device package of HUML2020L3
2SCR564F3TR Applications
There are a lot of Rohm Semiconductor
2SCR564F3TR applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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