2SC6017-E
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- Mfr.Part #
- 2SC6017-E
- Manufacturer
- onsemi
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet
- Download
- Description
- TRANS NPN 50V 10A TP
- Stock
- 1,224
- In Stock ：
- 1,224
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Supplier Device Package :
- TP
- Current - Collector Cutoff (Max) :
- 10µA (ICBO)
- Current - Collector (Ic) (Max) :
- 10 A
- Transistor Type :
- NPN
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 1A, 2V
- Mounting Type :
- Through Hole
- Operating Temperature :
- 150°C (TJ)
- Product Status :
- Obsolete
- Power - Max :
- 950 mW
- Vce Saturation (Max) @ Ib, Ic :
- 360mV @ 250mA, 5A
- Frequency - Transition :
- 200MHz
- Voltage - Collector Emitter Breakdown (Max) :
- 50 V
- Package / Case :
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheets
- 2SC6017-E
NPN 150°C TJ 10μA ICBO SILICON TO-251-3 Short Leads, IPak, TO-251AA Bulk Through Hole
2SC6017-E Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 200 @ 1A 2V DC current gain.As it features a collector emitter saturation voltage of 180mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 6V can result in a high level of efficiency.When collector current reaches its maximum, it can reach 10A volts.
2SC6017-E Features
the DC current gain for this device is 200 @ 1A 2V
a collector emitter saturation voltage of 180mV
the vce saturation(Max) is 360mV @ 250mA, 5A
the emitter base voltage is kept at 6V
2SC6017-E Applications
There are a lot of ON Semiconductor
2SC6017-E applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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