2SC5707-TL-E
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- Mfr.Part #
- 2SC5707-TL-E
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS NPN 50V 8A TPFA
- Stock
- 9,055
- In Stock ：
- 9,055
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Vce Saturation (Max) @ Ib, Ic :
- 240mV @ 175mA, 3.5A
- Power - Max :
- 1 W
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 500mA, 2V
- Frequency - Transition :
- 330MHz
- Current - Collector (Ic) (Max) :
- 8 A
- Mounting Type :
- Surface Mount
- Voltage - Collector Emitter Breakdown (Max) :
- 50 V
- Supplier Device Package :
- TP-FA
- Operating Temperature :
- 150°C (TJ)
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Transistor Type :
- NPN
- Product Status :
- Active
- Current - Collector Cutoff (Max) :
- 100nA (ICBO)
- Datasheets
- 2SC5707-TL-E
NPN 150°C TJ 100nA ICBO 1 Elements SILICON TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
2SC5707-TL-E Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 200 @ 500mA 2V.The collector emitter saturation voltage is 240mV, which allows for maximum design flexibility.When VCE saturation is 240mV @ 175mA, 3.5A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 6V can achieve high levels of efficiency.This device can take an input voltage of 50V volts before it breaks down.A maximum collector current of 8A volts can be achieved.
2SC5707-TL-E Features
the DC current gain for this device is 200 @ 500mA 2V
a collector emitter saturation voltage of 240mV
the vce saturation(Max) is 240mV @ 175mA, 3.5A
the emitter base voltage is kept at 6V
2SC5707-TL-E Applications
There are a lot of ON Semiconductor
2SC5707-TL-E applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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