2SC4213BTE85LF
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- Mfr.Part #
- 2SC4213BTE85LF
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS NPN 20V 0.3A USM
- Stock
- 16,413
- In Stock ：
- 16,413
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- Manufacturer :
- Toshiba Electronic Devices and Storage Corporation
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Frequency - Transition :
- 30MHz
- Voltage - Collector Emitter Breakdown (Max) :
- 20 V
- Product Status :
- Active
- Current - Collector Cutoff (Max) :
- 100nA (ICBO)
- Package / Case :
- SC-70, SOT-323
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 350 @ 4mA, 2V
- Operating Temperature :
- 125°C (TJ)
- Supplier Device Package :
- USM
- Mounting Type :
- Surface Mount
- Current - Collector (Ic) (Max) :
- 300 mA
- Transistor Type :
- NPN
- Vce Saturation (Max) @ Ib, Ic :
- 100mV @ 3mA, 30A
- Power - Max :
- 100 mW
- Datasheets
- 2SC4213BTE85LF
NPN 125°C TJ 100nA ICBO 1 Elements NPN SC-70, SOT-323 Cut Tape (CT) Surface Mount
2SC4213BTE85LF Overview
DC current gain in this device equals 350 @ 4mA 2V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 42mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 100mV @ 3mA, 30A.An emitter's base voltage can be kept at 25V to gain high efficiency.Breakdown input voltage is 20V volts.In extreme cases, the collector current can be as low as 300mA volts.
2SC4213BTE85LF Features
the DC current gain for this device is 350 @ 4mA 2V
a collector emitter saturation voltage of 42mV
the vce saturation(Max) is 100mV @ 3mA, 30A
the emitter base voltage is kept at 25V
2SC4213BTE85LF Applications
There are a lot of Toshiba Semiconductor and Storage
2SC4213BTE85LF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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