2SC4135S-TL-E
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- Mfr.Part #
- 2SC4135S-TL-E
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS NPN 100V 2A TPFA
- Stock
- 1,027
- In Stock ：
- 1,027
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Product Status :
- Active
- Supplier Device Package :
- TP-FA
- Mounting Type :
- Surface Mount
- Current - Collector (Ic) (Max) :
- 2 A
- Voltage - Collector Emitter Breakdown (Max) :
- 100 V
- Transistor Type :
- NPN
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 140 @ 100mA, 5V
- Operating Temperature :
- 150°C (TJ)
- Current - Collector Cutoff (Max) :
- 100nA (ICBO)
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 100mA, 1A
- Frequency - Transition :
- 120MHz
- Power - Max :
- 1 W
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheets
- 2SC4135S-TL-E
NPN 150°C TJ 100nA ICBO TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
2SC4135S-TL-E Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 140 @ 100mA 5V.With a collector emitter saturation voltage of 400mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 400mV @ 100mA, 1A.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.Collector current can be as low as 2A volts at its maximum.
2SC4135S-TL-E Features
the DC current gain for this device is 140 @ 100mA 5V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 400mV @ 100mA, 1A
the emitter base voltage is kept at 6V
2SC4135S-TL-E Applications
There are a lot of ON Semiconductor
2SC4135S-TL-E applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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