2SC3649T-TD-E

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Mfr.Part #
2SC3649T-TD-E
Manufacturer
onsemi
Package / Case
TO-243AA
Datasheet
Download
Description
TRANS NPN 160V 1.5A PCP
Stock
2,966
In Stock :
2,966

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Transistor Type :
NPN
Current - Collector (Ic) (Max) :
1.5 A
Vce Saturation (Max) @ Ib, Ic :
450mV @ 50mA, 500mA
Supplier Device Package :
PCP
Product Status :
Active
Frequency - Transition :
120MHz
Package / Case :
TO-243AA
Mounting Type :
Surface Mount
Power - Max :
500 mW
Current - Collector Cutoff (Max) :
1µA (ICBO)
Voltage - Collector Emitter Breakdown (Max) :
160 V
Operating Temperature :
150°C (TJ)
DC Current Gain (hFE) (Min) @ Ic, Vce :
100 @ 100mA, 5V
Datasheets
2SC3649T-TD-E
VESS Electronics offers Transistors - Bipolar (BJT) - Single onsemi 2SC3649T-TD-E, where excellence in quality meets cost-effectiveness. This premier offering shines with its comprehensive list of features, including Package / Case:TO-243AA, Mounting Type:Surface Mount, Operating Temperature:150°C (TJ), 2SC3649T-TD-E pinout, 2SC3649T-TD-E datasheet PDF, 2SC3649T-TD-E amp .Beyond Transistors - Bipolar (BJT) - Single onsemi 2SC3649T-TD-E ,we also present a selection of BC817-40,235, BC817-40,215, BC807-40,215, Our extensive stock is ready to fulfill your requirements. Connect with us now for tailored solutions.

NPN 150°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON NPN TO-243AA Tape & Reel (TR) Surface Mount

2SC3649T-TD-E Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 100mA 5V DC current gain.As it features a collector emitter saturation voltage of 130mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 6V can result in a high level of efficiency.There is a transition frequency of 120MHz in the part.When collector current reaches its maximum, it can reach 1.5A volts.

2SC3649T-TD-E Features


the DC current gain for this device is 100 @ 100mA 5V
a collector emitter saturation voltage of 130mV
the vce saturation(Max) is 450mV @ 50mA, 500mA
the emitter base voltage is kept at 6V
a transition frequency of 120MHz


2SC3649T-TD-E Applications


There are a lot of ON Semiconductor
2SC3649T-TD-E applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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