2SC1213AB-E
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- Mfr.Part #
- 2SC1213AB-E
- Manufacturer
- Intersil (Renesas Electronics Corporation)
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.5A TO92
- Stock
- 31,666
- In Stock ：
- 31,666
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- Manufacturer :
- Intersil (Renesas Electronics Corporation)
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 15mA, 150mA
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Power - Max :
- 400 mW
- Current - Collector Cutoff (Max) :
- 500nA (ICBO)
- Product Status :
- Active
- Frequency - Transition :
- -
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 60 @ 10mA, 3V
- Operating Temperature :
- 150°C (TJ)
- Mounting Type :
- Through Hole
- Transistor Type :
- NPN
- Supplier Device Package :
- TO-92
- Current - Collector (Ic) (Max) :
- 500 mA
- Voltage - Collector Emitter Breakdown (Max) :
- 50 V
- Datasheets
- 2SC1213AB-E
NPN 150°C (TJ) 500nA (ICBO) 1 Elements SILICON NPN TO-226-3, TO-92-3 (TO-226AA) Through Hole
2SC1213AB-E Overview
DC current gain in this device equals 60 @ 10mA, 3V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 600mV @ 15mA, 150mA.Product comes in TO-92 supplier package.Maximal collector-emitter voltage can be set at 50 V.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.
2SC1213AB-E Features
the DC current gain for this device is 60 @ 10mA, 3V
the vce saturation(Max) is 600mV @ 15mA, 150mA
the supplier device package of TO-92
2SC1213AB-E Applications
There are a lot of Renesas Electronics America Inc
2SC1213AB-E applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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