2SB815-6-TB-E

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Mfr.Part #
2SB815-6-TB-E
Manufacturer
onsemi
Package / Case
TO-236-3, SC-59, SOT-23-3
Datasheet
Download
Description
TRANS PNP 15V 0.7A 3CP
Stock
2,985
In Stock :
2,985

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Current - Collector Cutoff (Max) :
100nA (ICBO)
Product Status :
Obsolete
Transistor Type :
PNP
Vce Saturation (Max) @ Ib, Ic :
80mV @ 10mA, 100mA
Current - Collector (Ic) (Max) :
700 mA
Operating Temperature :
125°C (TJ)
Voltage - Collector Emitter Breakdown (Max) :
15 V
DC Current Gain (hFE) (Min) @ Ic, Vce :
200 @ 50mA, 2V
Package / Case :
TO-236-3, SC-59, SOT-23-3
Frequency - Transition :
250MHz
Power - Max :
200 mW
Supplier Device Package :
3-CP
Mounting Type :
Surface Mount
Datasheets
2SB815-6-TB-E
VESS Electronics offers Transistors - Bipolar (BJT) - Single onsemi 2SB815-6-TB-E, where excellence in quality meets cost-effectiveness. This premier offering shines with its comprehensive list of features, including Operating Temperature:125°C (TJ), Package / Case:TO-236-3, SC-59, SOT-23-3, Mounting Type:Surface Mount, 2SB815-6-TB-E pinout, 2SB815-6-TB-E datasheet PDF, 2SB815-6-TB-E amp .Beyond Transistors - Bipolar (BJT) - Single onsemi 2SB815-6-TB-E ,we also present a selection of BC817-40,235, BC817-40,215, BC807-40,215, Our extensive stock is ready to fulfill your requirements. Connect with us now for tailored solutions.

PNP 125°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount

2SB815-6-TB-E Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 200 @ 50mA 2V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -15mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 80mV @ 10mA, 100mA.The emitter base voltage can be kept at -5V for high efficiency.The part has a transition frequency of 250MHz.Single BJT transistor is possible to have a collector current as low as 700mA volts at Single BJT transistors maximum.

2SB815-6-TB-E Features


the DC current gain for this device is 200 @ 50mA 2V
a collector emitter saturation voltage of -15mV
the vce saturation(Max) is 80mV @ 10mA, 100mA
the emitter base voltage is kept at -5V
a transition frequency of 250MHz


2SB815-6-TB-E Applications


There are a lot of ON Semiconductor
2SB815-6-TB-E applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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