2SB1302T-TD-E
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- Mfr.Part #
- 2SB1302T-TD-E
- Manufacturer
- onsemi
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS PNP 20V 5A PCP
- Stock
- 4
- In Stock ：
- 4
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Type :
- PNP
- Power - Max :
- 1.3 W
- Supplier Device Package :
- PCP
- Product Status :
- Active
- Operating Temperature :
- 150°C (TJ)
- Current - Collector (Ic) (Max) :
- 5 A
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 60mA, 3A
- Package / Case :
- TO-243AA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 500mA, 2V
- Frequency - Transition :
- 320MHz
- Mounting Type :
- Surface Mount
- Current - Collector Cutoff (Max) :
- 500nA (ICBO)
- Voltage - Collector Emitter Breakdown (Max) :
- 20 V
- Datasheets
- 2SB1302T-TD-E
PNP 150°C TJ 500nA ICBO 1 Elements 3 Terminations SILICON PNP TO-243AA Tape & Reel (TR) Surface Mount
2SB1302T-TD-E Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 500mA 2V DC current gain.As it features a collector emitter saturation voltage of -500mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.There is a transition frequency of 320MHz in the part.When collector current reaches its maximum, it can reach 5A volts.
2SB1302T-TD-E Features
the DC current gain for this device is 100 @ 500mA 2V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 60mA, 3A
the emitter base voltage is kept at 5V
a transition frequency of 320MHz
2SB1302T-TD-E Applications
There are a lot of ON Semiconductor
2SB1302T-TD-E applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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