2SB1216S-TL-E
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- Mfr.Part #
- 2SB1216S-TL-E
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS PNP 100V 4A TPFA
- Stock
- 1,496
- In Stock ：
- 1,496
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector Cutoff (Max) :
- 1µA (ICBO)
- Product Status :
- Obsolete
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 200mA, 2A
- Supplier Device Package :
- TP-FA
- Operating Temperature :
- 150°C (TJ)
- Voltage - Collector Emitter Breakdown (Max) :
- 100 V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 140 @ 500mA, 5V
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Transistor Type :
- PNP
- Current - Collector (Ic) (Max) :
- 4 A
- Power - Max :
- 1 W
- Frequency - Transition :
- 130MHz
- Mounting Type :
- Surface Mount
- Datasheets
- 2SB1216S-TL-E
PNP 150°C TJ 1μA ICBO 1 Elements 2 Terminations SILICON PNP TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
2SB1216S-TL-E Overview
In this device, the DC current gain is 140 @ 500mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of -500mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 200mA, 2A.Keeping the emitter base voltage at 6V allows for a high level of efficiency.130MHz is present in the transition frequency.Maximum collector currents can be below 4A volts.
2SB1216S-TL-E Features
the DC current gain for this device is 140 @ 500mA 5V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 200mA, 2A
the emitter base voltage is kept at 6V
a transition frequency of 130MHz
2SB1216S-TL-E Applications
There are a lot of ON Semiconductor
2SB1216S-TL-E applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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