2SB1216S-E
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- Mfr.Part #
- 2SB1216S-E
- Manufacturer
- onsemi
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet
- Download
- Description
- TRANS PNP 100V 4A TP
- Stock
- 195
- In Stock ：
- 195
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mounting Type :
- Through Hole
- Voltage - Collector Emitter Breakdown (Max) :
- 100 V
- Package / Case :
- TO-251-3 Short Leads, IPak, TO-251AA
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 200mA, 2A
- Power - Max :
- 1 W
- Operating Temperature :
- 150°C (TJ)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 140 @ 500mA, 5V
- Current - Collector Cutoff (Max) :
- 1µA (ICBO)
- Frequency - Transition :
- 130MHz
- Current - Collector (Ic) (Max) :
- 4 A
- Supplier Device Package :
- TP
- Transistor Type :
- PNP
- Product Status :
- Obsolete
- Datasheets
- 2SB1216S-E
PNP 150°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON PNP TO-251-3 Short Leads, IPak, TO-251AA Bulk Through Hole
2SB1216S-E Overview
This device has a DC current gain of 140 @ 500mA 5V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 500mV @ 200mA, 2A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at -6V.As you can see, the part has a transition frequency of 130MHz.A maximum collector current of 4A volts is possible.
2SB1216S-E Features
the DC current gain for this device is 140 @ 500mA 5V
the vce saturation(Max) is 500mV @ 200mA, 2A
the emitter base voltage is kept at -6V
a transition frequency of 130MHz
2SB1216S-E Applications
There are a lot of ON Semiconductor
2SB1216S-E applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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