2SB1204T-E
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- Mfr.Part #
- 2SB1204T-E
- Manufacturer
- onsemi
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet
- Download
- Description
- TRANS PNP 50V 8A TP
- Stock
- 1,263
- In Stock ：
- 1,263
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Power - Max :
- 1 W
- Package / Case :
- TO-251-3 Short Leads, IPak, TO-251AA
- Current - Collector Cutoff (Max) :
- 1µA (ICBO)
- Supplier Device Package :
- TP
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 200mA, 4A
- Transistor Type :
- PNP
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 500mA, 2V
- Frequency - Transition :
- 130MHz
- Voltage - Collector Emitter Breakdown (Max) :
- 50 V
- Operating Temperature :
- 150°C (TJ)
- Product Status :
- Obsolete
- Current - Collector (Ic) (Max) :
- 8 A
- Mounting Type :
- Through Hole
- Datasheets
- 2SB1204T-E
PNP 150°C TJ 1μA ICBO PNP TO-251-3 Short Leads, IPak, TO-251AA Bulk Through Hole
2SB1204T-E Overview
DC current gain in this device equals 200 @ 500mA 2V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 200mA, 4A.An emitter's base voltage can be kept at -6V to gain high efficiency.In extreme cases, the collector current can be as low as 8A volts.
2SB1204T-E Features
the DC current gain for this device is 200 @ 500mA 2V
the vce saturation(Max) is 500mV @ 200mA, 4A
the emitter base voltage is kept at -6V
2SB1204T-E Applications
There are a lot of ON Semiconductor
2SB1204T-E applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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