2SB1203S-TL-E
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- Mfr.Part #
- 2SB1203S-TL-E
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS PNP 50V 5A TP-FA
- Stock
- 247
- In Stock ：
- 247
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Supplier Device Package :
- TP-FA
- Current - Collector (Ic) (Max) :
- 5 A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 70 @ 500mA, 2V
- Power - Max :
- 1 W
- Transistor Type :
- PNP
- Operating Temperature :
- 150°C (TJ)
- Product Status :
- Obsolete
- Voltage - Collector Emitter Breakdown (Max) :
- 50 V
- Vce Saturation (Max) @ Ib, Ic :
- 550mV @ 150mA, 3A
- Frequency - Transition :
- 130MHz
- Mounting Type :
- Surface Mount
- Current - Collector Cutoff (Max) :
- 1µA (ICBO)
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheets
- 2SB1203S-TL-E
PNP 150°C TJ 1μA ICBO TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
2SB1203S-TL-E Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 70 @ 500mA 2V.The collector emitter saturation voltage is -280mV, which allows for maximum design flexibility.When VCE saturation is 550mV @ 150mA, 3A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of -6V can achieve high levels of efficiency.This device can take an input voltage of 50V volts before it breaks down.A maximum collector current of 5A volts can be achieved.
2SB1203S-TL-E Features
the DC current gain for this device is 70 @ 500mA 2V
a collector emitter saturation voltage of -280mV
the vce saturation(Max) is 550mV @ 150mA, 3A
the emitter base voltage is kept at -6V
2SB1203S-TL-E Applications
There are a lot of ON Semiconductor
2SB1203S-TL-E applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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