2SB1203S-E
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- Mfr.Part #
- 2SB1203S-E
- Manufacturer
- onsemi
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet
- Download
- Description
- TRANS PNP 50V 5A TP
- Stock
- 668
- In Stock ：
- 668
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Product Status :
- Obsolete
- Current - Collector (Ic) (Max) :
- 5 A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 140 @ 500mA, 2V
- Current - Collector Cutoff (Max) :
- 1µA (ICBO)
- Power - Max :
- 1 W
- Mounting Type :
- Through Hole
- Frequency - Transition :
- 130MHz
- Package / Case :
- TO-251-3 Short Leads, IPak, TO-251AA
- Supplier Device Package :
- TP
- Operating Temperature :
- 150°C (TJ)
- Vce Saturation (Max) @ Ib, Ic :
- 550mV @ 150mA, 3A
- Transistor Type :
- PNP
- Voltage - Collector Emitter Breakdown (Max) :
- 50 V
- Datasheets
- 2SB1203S-E
PNP 150°C TJ 1μA ICBO TO-251-3 Short Leads, IPak, TO-251AA Bulk Through Hole
2SB1203S-E Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 140 @ 500mA 2V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 550mV @ 150mA, 3A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -6V.During maximum operation, collector current can be as low as 5A volts.
2SB1203S-E Features
the DC current gain for this device is 140 @ 500mA 2V
the vce saturation(Max) is 550mV @ 150mA, 3A
the emitter base voltage is kept at -6V
2SB1203S-E Applications
There are a lot of ON Semiconductor
2SB1203S-E applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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