2SB1202T-TL-E
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- Mfr.Part #
- 2SB1202T-TL-E
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS PNP 50V 3A TPFA
- Stock
- 1,712
- In Stock ：
- 1,712
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Product Status :
- Obsolete
- Transistor Type :
- PNP
- Voltage - Collector Emitter Breakdown (Max) :
- 50 V
- Power - Max :
- 1 W
- Frequency - Transition :
- 150MHz
- Operating Temperature :
- 150°C (TJ)
- Supplier Device Package :
- TP-FA
- Mounting Type :
- Surface Mount
- Current - Collector (Ic) (Max) :
- 3 A
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 100mA, 2A
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Current - Collector Cutoff (Max) :
- 1µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 100mA, 2V
- Datasheets
- 2SB1202T-TL-E
PNP 150°C TJ 1μA ICBO 1 Elements PNP TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
2SB1202T-TL-E Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 200 @ 100mA 2V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -700μV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 700mV @ 100mA, 2A.The emitter base voltage can be kept at -6V for high efficiency.Single BJT transistor is possible to have a collector current as low as 3A volts at Single BJT transistors maximum.
2SB1202T-TL-E Features
the DC current gain for this device is 200 @ 100mA 2V
a collector emitter saturation voltage of -700μV
the vce saturation(Max) is 700mV @ 100mA, 2A
the emitter base voltage is kept at -6V
2SB1202T-TL-E Applications
There are a lot of ON Semiconductor
2SB1202T-TL-E applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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