2SB1122T-TD-E
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- Mfr.Part #
- 2SB1122T-TD-E
- Manufacturer
- onsemi
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS PNP 50V 1A PCP
- Stock
- 4,191
- In Stock ：
- 4,191
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Operating Temperature :
- 150°C (TJ)
- Supplier Device Package :
- PCP
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Power - Max :
- 500 mW
- Mounting Type :
- Surface Mount
- Transistor Type :
- PNP
- Current - Collector (Ic) (Max) :
- 1 A
- Package / Case :
- TO-243AA
- Frequency - Transition :
- 150MHz
- Voltage - Collector Emitter Breakdown (Max) :
- 50 V
- Current - Collector Cutoff (Max) :
- 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA, 2V
- Product Status :
- Obsolete
- Datasheets
- 2SB1122T-TD-E
PNP 150°C TJ 100nA ICBO PNP TO-243AA Tape & Reel (TR) Surface Mount
2SB1122T-TD-E Overview
This device has a DC current gain of 100 @ 100mA 2V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of -500mV.A VCE saturation (Max) of 500mV @ 50mA, 500mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at -5V.A maximum collector current of 1A volts is possible.
2SB1122T-TD-E Features
the DC current gain for this device is 100 @ 100mA 2V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
2SB1122T-TD-E Applications
There are a lot of ON Semiconductor
2SB1122T-TD-E applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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