2SA1943RTU
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- Mfr.Part #
- 2SA1943RTU
- Manufacturer
- onsemi
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- TRANS PNP 250V 17A TO264-3
- Stock
- 280
- In Stock ：
- 280
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Type :
- PNP
- Mounting Type :
- Through Hole
- Voltage - Collector Emitter Breakdown (Max) :
- 250 V
- Operating Temperature :
- -50°C ~ 150°C (TJ)
- Frequency - Transition :
- 30MHz
- Current - Collector (Ic) (Max) :
- 17 A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 55 @ 1A, 5V
- Power - Max :
- 150 W
- Supplier Device Package :
- TO-264-3
- Current - Collector Cutoff (Max) :
- 5µA (ICBO)
- Product Status :
- Active
- Package / Case :
- TO-264-3, TO-264AA
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 800mA, 8A
- Datasheets
- 2SA1943RTU
PNP -50°C~150°C TJ 5μA ICBO 1 Elements 3 Terminations SILICON PNP TO-264-3, TO-264AA Tube Through Hole
2SA1943RTU Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 55 @ 1A 5V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 3V @ 800mA, 8A.If the emitter base voltage is kept at -5V, a high level of efficiency can be achieved.A transition frequency of 30MHz is present in the part.Collector current can be as low as 17A volts at its maximum.
2SA1943RTU Features
the DC current gain for this device is 55 @ 1A 5V
the vce saturation(Max) is 3V @ 800mA, 8A
the emitter base voltage is kept at -5V
a transition frequency of 30MHz
2SA1943RTU Applications
There are a lot of ON Semiconductor
2SA1943RTU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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