2SA1552S-TL-E
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- Mfr.Part #
- 2SA1552S-TL-E
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS PNP 160V 1.5A TP-FA
- Stock
- 402
- In Stock ：
- 402
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Type :
- PNP
- Current - Collector Cutoff (Max) :
- 1µA (ICBO)
- Power - Max :
- 1 W
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Operating Temperature :
- 150°C (TJ)
- Product Status :
- Active
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 140 @ 100mA, 5V
- Frequency - Transition :
- 120MHz
- Voltage - Collector Emitter Breakdown (Max) :
- 160 V
- Supplier Device Package :
- TP-FA
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Current - Collector (Ic) (Max) :
- 1.5 A
- Mounting Type :
- Surface Mount
- Datasheets
- 2SA1552S-TL-E
PNP 150°C TJ 1μA ICBO PNP TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
2SA1552S-TL-E Overview
In this device, the DC current gain is 140 @ 100mA 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -500mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 50mA, 500mA.With the emitter base voltage set at 6V, an efficient operation can be achieved.Input voltage breakdown is available at 160V volts.Single BJT transistor is possible for the collector current to fall as low as 1.5A volts at Single BJT transistors maximum.
2SA1552S-TL-E Features
the DC current gain for this device is 140 @ 100mA 5V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 6V
2SA1552S-TL-E Applications
There are a lot of ON Semiconductor
2SA1552S-TL-E applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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