2SA1552S-E
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- Mfr.Part #
- 2SA1552S-E
- Manufacturer
- onsemi
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet
- Download
- Description
- TRANS PNP 160V 1.5A TP
- Stock
- 31,785
- In Stock ：
- 31,785
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Frequency - Transition :
- 120MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 140 @ 100mA, 5V
- Current - Collector Cutoff (Max) :
- 1µA (ICBO)
- Current - Collector (Ic) (Max) :
- 1.5 A
- Supplier Device Package :
- TP
- Mounting Type :
- Through Hole
- Power - Max :
- 1 W
- Voltage - Collector Emitter Breakdown (Max) :
- 160 V
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Product Status :
- Obsolete
- Transistor Type :
- PNP
- Package / Case :
- TO-251-3 Short Leads, IPak, TO-251AA
- Operating Temperature :
- 150°C (TJ)
- Datasheets
- 2SA1552S-E
PNP 150°C TJ 1μA ICBO PNP TO-251-3 Short Leads, IPak, TO-251AA Bulk Through Hole
2SA1552S-E Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 140 @ 100mA 5V.The collector emitter saturation voltage is -200mV, which allows for maximum design flexibility.When VCE saturation is 500mV @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of -6V can achieve high levels of efficiency.A maximum collector current of 1.5A volts can be achieved.
2SA1552S-E Features
the DC current gain for this device is 140 @ 100mA 5V
a collector emitter saturation voltage of -200mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at -6V
2SA1552S-E Applications
There are a lot of ON Semiconductor
2SA1552S-E applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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