2SA1416T-TD-E

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Mfr.Part #
2SA1416T-TD-E
Manufacturer
onsemi
Package / Case
TO-243AA
Datasheet
Download
Description
TRANS PNP 100V 1A PCP
Stock
24
In Stock :
24

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Voltage - Collector Emitter Breakdown (Max) :
100 V
Product Status :
Active
Mounting Type :
Surface Mount
Frequency - Transition :
120MHz
Operating Temperature :
150°C (TJ)
Supplier Device Package :
PCP
Package / Case :
TO-243AA
Vce Saturation (Max) @ Ib, Ic :
400mV @ 40mA, 400mA
Power - Max :
500 mW
Current - Collector Cutoff (Max) :
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce :
100 @ 100mA, 5V
Current - Collector (Ic) (Max) :
1 A
Transistor Type :
PNP
Datasheets
2SA1416T-TD-E
VESS Electronics offers Transistors - Bipolar (BJT) - Single onsemi 2SA1416T-TD-E, where excellence in quality meets cost-effectiveness. This premier offering shines with its comprehensive list of features, including Mounting Type:Surface Mount, Operating Temperature:150°C (TJ), Package / Case:TO-243AA, 2SA1416T-TD-E pinout, 2SA1416T-TD-E datasheet PDF, 2SA1416T-TD-E amp .Beyond Transistors - Bipolar (BJT) - Single onsemi 2SA1416T-TD-E ,we also present a selection of BC817-40,235, BC817-40,215, BC807-40,215, Our extensive stock is ready to fulfill your requirements. Connect with us now for tailored solutions.

PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-243AA Tape & Reel (TR) Surface Mount

2SA1416T-TD-E Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 100mA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -600mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 400mV @ 40mA, 400mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.Parts of this part have transition frequencies of 120MHz.During maximum operation, collector current can be as low as 1A volts.

2SA1416T-TD-E Features


the DC current gain for this device is 100 @ 100mA 5V
a collector emitter saturation voltage of -600mV
the vce saturation(Max) is 400mV @ 40mA, 400mA
the emitter base voltage is kept at 6V
a transition frequency of 120MHz


2SA1416T-TD-E Applications


There are a lot of ON Semiconductor
2SA1416T-TD-E applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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