2SA1416S-TD-E
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- Mfr.Part #
- 2SA1416S-TD-E
- Manufacturer
- onsemi
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS PNP 100V 1A PCP
- Stock
- 200
- In Stock ：
- 200
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Package / Case :
- TO-243AA
- Supplier Device Package :
- PCP
- Voltage - Collector Emitter Breakdown (Max) :
- 100 V
- Current - Collector Cutoff (Max) :
- 100nA (ICBO)
- Mounting Type :
- Surface Mount
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 40mA, 400mA
- Product Status :
- Active
- Power - Max :
- 500 mW
- Operating Temperature :
- 150°C (TJ)
- Transistor Type :
- PNP
- Current - Collector (Ic) (Max) :
- 1 A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA, 5V
- Frequency - Transition :
- 120MHz
- Datasheets
- 2SA1416S-TD-E
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-243AA Tape & Reel (TR) Surface Mount
2SA1416S-TD-E Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 100mA 5V.The collector emitter saturation voltage is -200mV, which allows for maximum design flexibility.When VCE saturation is 400mV @ 40mA, 400mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of -6V can achieve high levels of efficiency.In the part, the transition frequency is 120MHz.This device can take an input voltage of 100V volts before it breaks down.A maximum collector current of 1A volts can be achieved.
2SA1416S-TD-E Features
the DC current gain for this device is 100 @ 100mA 5V
a collector emitter saturation voltage of -200mV
the vce saturation(Max) is 400mV @ 40mA, 400mA
the emitter base voltage is kept at -6V
a transition frequency of 120MHz
2SA1416S-TD-E Applications
There are a lot of ON Semiconductor
2SA1416S-TD-E applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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