2N720A
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- Mfr.Part #
- 2N720A
- Manufacturer
- Microchip Technology
- Package / Case
- TO-206AA, TO-18-3 Metal Can
- Datasheet
- Download
- Description
- TRANS NPN 80V 0.5A TO18
- Stock
- 4,158
- In Stock ：
- 4,158
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector Cutoff (Max) :
- 10µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 150mA, 10V
- Operating Temperature :
- -65°C ~ 200°C (TJ)
- Vce Saturation (Max) @ Ib, Ic :
- 5V @ 15mA, 150mA
- Product Status :
- Active
- Power - Max :
- 500 mW
- Transistor Type :
- NPN
- Voltage - Collector Emitter Breakdown (Max) :
- 80 V
- Frequency - Transition :
- -
- Supplier Device Package :
- TO-18 (TO-206AA)
- Mounting Type :
- Through Hole
- Package / Case :
- TO-206AA, TO-18-3 Metal Can
- Current - Collector (Ic) (Max) :
- 500 mA
- Datasheets
- 2N720A
NPN -65°C~200°C TJ 10μA ICBO 1 Elements TO-206AA, TO-18-3 Metal Can Bulk Through Hole
2N720A Overview
This device has a DC current gain of 40 @ 150mA 10V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 7V to achieve high efficiency.Single BJT transistor comes in a supplier device package of TO-18 (TO-206AA).Detection of Collector Emitter Breakdown at 80V maximal voltage is present.The maximum collector current is 500mA volts.
2N720A Features
the DC current gain for this device is 40 @ 150mA 10V
the vce saturation(Max) is 5V @ 15mA, 150mA
the emitter base voltage is kept at 7V
the supplier device package of TO-18 (TO-206AA)
2N720A Applications
There are a lot of Microsemi Corporation
2N720A applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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