2N5731
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- Mfr.Part #
- 2N5731
- Manufacturer
- Microchip Technology
- Package / Case
- TO-211MA, TO-210AC, TO-61-4, Stud
- Datasheet
- Download
- Description
- POWER BJT
- Stock
- 20,916
- In Stock ：
- 20,916
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Frequency - Transition :
- -
- Current - Collector Cutoff (Max) :
- -
- Operating Temperature :
- -65°C ~ 200°C (TJ)
- Transistor Type :
- PNP
- Product Status :
- Active
- Current - Collector (Ic) (Max) :
- 20 A
- Vce Saturation (Max) @ Ib, Ic :
- -
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- -
- Supplier Device Package :
- TO-61
- Voltage - Collector Emitter Breakdown (Max) :
- 80 V
- Power - Max :
- 75 W
- Package / Case :
- TO-211MA, TO-210AC, TO-61-4, Stud
- Mounting Type :
- Stud Mount
- Datasheets
- 2N5731
PNP -65°C ~ 200°C (TJ) - 1 Elements SILICON NPN TO-211MA, TO-210AC, TO-61-4, Stud Stud Mount
2N5731 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is -.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is -.TO-61 is the supplier device package for this product.In the 80 V setting, the maximum collector-emitter voltage is set.This device displays a 80 V maximum voltage - Collector Emitter Breakdown.
2N5731 Features
the DC current gain for this device is -
the vce saturation(Max) is -
the supplier device package of TO-61
2N5731 Applications
There are a lot of Microchip Technology
2N5731 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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