2N5400RLRPG

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Mfr.Part #
2N5400RLRPG
Manufacturer
onsemi
Package / Case
TO-226-3, TO-92-3 Long Body (Formed Leads)
Datasheet
Download
Description
TRANS PNP 120V 0.6A TO92
Stock
13,670
In Stock :
13,670

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Voltage - Collector Emitter Breakdown (Max) :
120 V
Frequency - Transition :
400MHz
Current - Collector (Ic) (Max) :
600 mA
Supplier Device Package :
TO-92 (TO-226)
Transistor Type :
PNP
Vce Saturation (Max) @ Ib, Ic :
500mV @ 5mA, 50mA
Power - Max :
625 mW
Operating Temperature :
-55°C ~ 150°C (TJ)
DC Current Gain (hFE) (Min) @ Ic, Vce :
40 @ 10mA, 5V
Package / Case :
TO-226-3, TO-92-3 Long Body (Formed Leads)
Product Status :
Obsolete
Mounting Type :
Through Hole
Current - Collector Cutoff (Max) :
100nA (ICBO)
Datasheets
2N5400RLRPG
VESS Electronics offers Transistors - Bipolar (BJT) - Single onsemi 2N5400RLRPG, where excellence in quality meets cost-effectiveness. This premier offering shines with its comprehensive list of features, including Operating Temperature:-55°C ~ 150°C (TJ), Package / Case:TO-226-3, TO-92-3 Long Body (Formed Leads), Mounting Type:Through Hole, 2N5400RLRPG pinout, 2N5400RLRPG datasheet PDF, 2N5400RLRPG amp .Beyond Transistors - Bipolar (BJT) - Single onsemi 2N5400RLRPG ,we also present a selection of BC817-40,235, BC817-40,215, BC807-40,215, Our extensive stock is ready to fulfill your requirements. Connect with us now for tailored solutions.

PNP -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Reel (TR) Through Hole

2N5400RLRPG Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 40 @ 10mA 5V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -500mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 5mA, 50mA.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is -600mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 100MHz.Single BJT transistor is possible to have a collector current as low as 600mA volts at Single BJT transistors maximum.

2N5400RLRPG Features


the DC current gain for this device is 40 @ 10mA 5V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 5mA, 50mA
the emitter base voltage is kept at 5V
the current rating of this device is -600mA
a transition frequency of 100MHz


2N5400RLRPG Applications


There are a lot of ON Semiconductor
2N5400RLRPG applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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