2N5075
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- Mfr.Part #
- 2N5075
- Manufacturer
- Microchip Technology
- Package / Case
- TO-210AA, TO-59-4, Stud
- Datasheet
- Download
- Description
- POWER BJT
- Stock
- 15,020
- In Stock ：
- 15,020
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- -
- Supplier Device Package :
- TO-59
- Mounting Type :
- Stud Mount
- Operating Temperature :
- -65°C ~ 200°C (TJ)
- Power - Max :
- 40 W
- Frequency - Transition :
- -
- Current - Collector Cutoff (Max) :
- -
- Transistor Type :
- NPN
- Current - Collector (Ic) (Max) :
- 3 A
- Vce Saturation (Max) @ Ib, Ic :
- 2V @ 300µA, 500µA
- Voltage - Collector Emitter Breakdown (Max) :
- 200 V
- Product Status :
- Active
- Package / Case :
- TO-210AA, TO-59-4, Stud
- Datasheets
- 2N5075
NPN -65°C ~ 200°C (TJ) - 1 Elements SILICON NPN TO-210AA, TO-59-4, Stud Stud Mount
2N5075 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is -.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 2V @ 300μA, 500μA.TO-59 is the supplier device package for this product.In the 200 V setting, the maximum collector-emitter voltage is set.This device displays a 200 V maximum voltage - Collector Emitter Breakdown.
2N5075 Features
the DC current gain for this device is -
the vce saturation(Max) is 2V @ 300μA, 500μA
the supplier device package of TO-59
2N5075 Applications
There are a lot of Microchip Technology
2N5075 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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