2N2906
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- Mfr.Part #
- 2N2906
- Manufacturer
- Microchip Technology
- Package / Case
- TO-206AA, TO-18-3 Metal Can
- Datasheet
- Download
- Description
- SMALL-SIGNAL BJT
- Stock
- 21,485
- In Stock ：
- 21,485
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector (Ic) (Max) :
- 600 mA
- Supplier Device Package :
- TO-18 (TO-206AA)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 150mA, 10V
- Mounting Type :
- Through Hole
- Vce Saturation (Max) @ Ib, Ic :
- 1.6V @ 50mA, 500mA
- Voltage - Collector Emitter Breakdown (Max) :
- 40 V
- Current - Collector Cutoff (Max) :
- 20nA (ICBO)
- Frequency - Transition :
- -
- Package / Case :
- TO-206AA, TO-18-3 Metal Can
- Product Status :
- Active
- Power - Max :
- 400 mW
- Operating Temperature :
- -
- Transistor Type :
- PNP
- Datasheets
- 2N2906
PNP -65°C ~ 200°C (TJ) 20nA (ICBO) 1 Elements SILICON PNP TO-206AA, TO-18-3 Metal Can Bulk Through Hole
2N2906 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 40 @ 150mA, 10V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1.6V @ 50mA, 500mA.A transition frequency of 200MHz is present in the part.The product comes in the supplier device package of TO-18.There is a setting of 40V for maximal collector-Emitter voltage.A 40V maximal voltage - Collector Emitter Breakdown is present in the device.
2N2906 Features
the DC current gain for this device is 40 @ 150mA, 10V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
a transition frequency of 200MHz
the supplier device package of TO-18
2N2906 Applications
There are a lot of Central Semiconductor
2N2906 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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