2N2369A
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- Mfr.Part #
- 2N2369A
- Manufacturer
- Microchip Technology
- Package / Case
- TO-206AA, TO-18-3 Metal Can
- Datasheet
- Download
- Description
- TRANS NPN 15V TO18
- Stock
- 973
- In Stock ：
- 973
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Product Status :
- Active
- Current - Collector (Ic) (Max) :
- -
- Supplier Device Package :
- TO-18 (TO-206AA)
- Power - Max :
- 360 mW
- Transistor Type :
- NPN
- Operating Temperature :
- -65°C ~ 200°C (TJ)
- Voltage - Collector Emitter Breakdown (Max) :
- 15 V
- Package / Case :
- TO-206AA, TO-18-3 Metal Can
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 100mA, 1V
- Mounting Type :
- Through Hole
- Current - Collector Cutoff (Max) :
- 400nA
- Vce Saturation (Max) @ Ib, Ic :
- 450mV @ 10mA, 100mA
- Frequency - Transition :
- -
- Datasheets
- 2N2369A
NPN -65°C~200°C TJ 1 Elements 3 Terminations SILICON NPN TO-206AA, TO-18-3 Metal Can Bulk Through Hole
2N2369A Overview
In this device, the DC current gain is 20 @ 100mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 450mV @ 10mA, 100mA.Keeping the emitter base voltage at 4.5V allows for a high level of efficiency.500MHz is present in the transition frequency.Maximum collector currents can be below 400nA volts.
2N2369A Features
the DC current gain for this device is 20 @ 100mA 1V
the vce saturation(Max) is 450mV @ 10mA, 100mA
the emitter base voltage is kept at 4.5V
a transition frequency of 500MHz
2N2369A Applications
There are a lot of Microsemi Corporation
2N2369A applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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