2N2222AE4
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- Mfr.Part #
- 2N2222AE4
- Manufacturer
- Microchip Technology
- Package / Case
- TO-206AA, TO-18-3 Metal Can
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.8A TO18
- Stock
- 26,401
- In Stock ：
- 26,401
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mounting Type :
- Through Hole
- Frequency - Transition :
- -
- Product Status :
- Active
- Voltage - Collector Emitter Breakdown (Max) :
- 50 V
- Supplier Device Package :
- TO-18 (TO-206AA)
- Transistor Type :
- NPN
- Operating Temperature :
- -65°C ~ 200°C (TJ)
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 50mA, 500mA
- Package / Case :
- TO-206AA, TO-18-3 Metal Can
- Power - Max :
- 500 mW
- Current - Collector Cutoff (Max) :
- 50nA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA, 10V
- Current - Collector (Ic) (Max) :
- 800 mA
- Datasheets
- 2N2222AE4
NPN -65°C~200°C TJ 10μA ICBO TO-206AA, TO-18-3 Metal Can Bulk Through Hole
2N2222AE4 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 150mA 10V.When VCE saturation is 1V @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).Supplier package TO-18 contains the product.The device has a 50V maximal voltage - Collector Emitter Breakdown.A maximum collector current of 800mA volts can be achieved.
2N2222AE4 Features
the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 1V @ 50mA, 500mA
the supplier device package of TO-18
2N2222AE4 Applications
There are a lot of Microsemi Corporation
2N2222AE4 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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