2DA1797-13
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- Mfr.Part #
- 2DA1797-13
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS PNP 50V 3A SOT89-3
- Stock
- 1,297
- In Stock ：
- 1,297
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Type :
- PNP
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Voltage - Collector Emitter Breakdown (Max) :
- 50 V
- Vce Saturation (Max) @ Ib, Ic :
- 350mV @ 50mA, 1A
- Current - Collector (Ic) (Max) :
- 3 A
- Product Status :
- Active
- Power - Max :
- 900 mW
- Supplier Device Package :
- SOT-89-3
- Current - Collector Cutoff (Max) :
- 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 82 @ 500mA, 2V
- Mounting Type :
- Surface Mount
- Frequency - Transition :
- 160MHz
- Package / Case :
- TO-243AA
- Datasheets
- 2DA1797-13
PNP -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON TO-243AA Tape & Reel (TR) Surface Mount
2DA1797-13 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 82 @ 500mA 2V.With a collector emitter saturation voltage of -100mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 350mV @ 50mA, 1A.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.A transition frequency of 160MHz is present in the part.There is a breakdown input voltage of 50V volts that it can take.Collector current can be as low as 3A volts at its maximum.
2DA1797-13 Features
the DC current gain for this device is 82 @ 500mA 2V
a collector emitter saturation voltage of -100mV
the vce saturation(Max) is 350mV @ 50mA, 1A
the emitter base voltage is kept at 6V
a transition frequency of 160MHz
2DA1797-13 Applications
There are a lot of Diodes Incorporated
2DA1797-13 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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